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CN/EN

產(chǎn)品與市場(chǎng)

SI13U

特點(diǎn)

Tg≥230℃ (DMA),Td>400℃ (5% loss, TGA)
High Flexural Modulus/Low X, Y / Z-axis CTE
Good punching & Drilling ability
Halogen-free compatible with lead-free processing. RoHS/WEEE compliant.


應用領(lǐng)域

Memory Card, SSD,DRAM

Fingerprint, RFModule, AP

BOC, COB, WBBGA

  • 產(chǎn)品性能
  • 產(chǎn)品證書(shū)
  • 資料下載
Items Condition Unit SI13U
Tg DMA 245
Td 5% wt. loss
>400
CTE (X/Y-axis) Before Tg ppm/℃
13
CTE (Z-axis)
α1/α2 ppm/℃
30/140
Dielectric Constant * (1GHz) @1GHz - 4.8
Dissipation Factor * (1GHz)
@1GHz - 0.013
Peel Strength * 1/3 OZ, LP Cu N/mm
0.90
Solder Dipping @288℃ min >30
Young's modulus 50℃ GPa 22
Young's modulus
200℃ GPa
13
Flexural Modulus* 50℃
GPa
28
Flexural Modulus*
200℃
GPa
15
Water Absorption*
A % 0.14
Water Absorption* 85℃/85%RH, 168Hr %
0.35
Flammability
UL-94 Rating
V-0
Thermal Conductivity - W/(m.K) 0.58
Color - - Black

Remarks:

Specimen thickness: 0.10mm, besides the items with * is for 0.8mm specimen thickness. Test method is according to IPC-TM-650.

All the typical value listed above is foryour reference only, please turn to Shengyi Technology Co., Ltd. for detailed information, and all rights from this data sheet are reserved by Shengyi Technology Co., Ltd.

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